PN2369A Specs and Replacement

Type Designator: PN2369A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-92

 PN2369A Substitution

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PN2369A datasheet

 ..1. Size:50K  philips

pn2369 pn2369a 3.pdf pdf_icon

PN2369A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors 1999 Apr 14 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 collector 2 base APPLICATIONS 3 e... See More ⇒

 ..2. Size:749K  fairchild semi

pn2369a mmbt2369a.pdf pdf_icon

PN2369A

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo... See More ⇒

 8.1. Size:30K  fairchild semi

pn2369.pdf pdf_icon

PN2369A

PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vol... See More ⇒

 8.2. Size:121K  fairchild semi

mmbt2369 pn2369.pdf pdf_icon

PN2369A

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit... See More ⇒

Detailed specifications: KSP5179, KSP94, KST3906, KST4125, KST5401, KST5551, MAT02, MMBT2222AK, TIP3055, MMBT2369A, MMBT2907AK, MMBT3702, MMBT3904K, MMBT3906K, MMBT4401K, MMBT4403K, MMBT5770

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