PZTA29 Datasheet, Equivalent, Cross Reference Search
Type Designator: PZTA29
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: SOT-223
PZTA29 Transistor Equivalent Substitute - Cross-Reference Search
PZTA29 Datasheet (PDF)
pzta29.pdf
PZTA29NPN Darlington Transistor This device designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 10
mpsa28 mmbta28 pzta28.pdf
MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle
pzta27.pdf
PZTA27NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA27 is designed for darlingtonamplifier high current gain collector current to 500mA.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. A 2 7 D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
