2N6339A Specs and Replacement
Type Designator: 2N6339A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2N6339A Substitution
- BJT ⓘ Cross-Reference Search
2N6339A datasheet
2N6339ACECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe... See More ⇒
2n6338 2n6339 2n6340 2n6341.pdf 
Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial military power amplifier and switching circuit 2N6340 applications. High Collector Emitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred De... See More ⇒
2n6338 2n6339 2n6340 2n6341.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436 38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base ... See More ⇒
Detailed specifications: 2N6328, 2N6329, 2N633, 2N6330, 2N6331, 2N6338, 2N6338A, 2N6339, BC337, 2N6339X, 2N634, 2N6340, 2N6340A, 2N6341, 2N6341A, 2N6347, 2N634A
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