TN3440A Specs and Replacement
Type Designator: TN3440A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-226
TN3440A Substitution
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TN3440A datasheet
TN3440A TO-226 C B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 250 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V... See More ⇒
Spec. No. C874N6 Issued Date 2013.07.10 CYStech Electronics Corp. Revised Date 2017.03.29 Page No. 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150V MTN3440N6 ID@VGS=10V, TA=25 C 1.7A ID@VGS=10V, TA=70 C 1.4A ID@VGS=10V, TC=25 C 2.2A ID@VGS=10V, TC=70 C 1.8A Features 245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=... See More ⇒
STN3446 STN3446 STN3446 STN3446 N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo... See More ⇒
Detailed specifications: PZTA29, SD1391, SD1398, SJ5436, SJ5437, SJ5439, STS8550, TN3019A, 2SD669A, TN4033A, TN5320A, TN5415A, TN6705A, TN6707A, TN6716A, TN6718A, TN6719A
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