TN3440A Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3440A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-226
TN3440A Transistor Equivalent Substitute - Cross-Reference Search
TN3440A Datasheet (PDF)
tn3440a.pdf
TN3440ATO-226CBENPN General Purpose AmplifierThis device is designed for use in horizontal driver, class A off-line amplifierand off-line switching applications. Sourced from Process 36.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 250 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 7.0 V
mtn3440n6.pdf
Spec. No. : C874N6 Issued Date : 2013.07.10 CYStech Electronics Corp.Revised Date : 2017.03.29 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150VMTN3440N6 ID@VGS=10V, TA=25C 1.7A ID@VGS=10V, TA=70C 1.4A ID@VGS=10V, TC=25C 2.2A ID@VGS=10V, TC=70C 1.8A Features245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=
stn3446.pdf
STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
