UNR1114 Specs and Replacement

Type Designator: UNR1114

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: M-A1

 UNR1114 Substitution

- BJT ⓘ Cross-Reference Search

 

UNR1114 datasheet

NO PDF data!

Detailed specifications: TN6719A, TN6725A, TN6727A, ZTX749A, UNR1110, UNR1111, UNR1112, UNR1113, TIP32C, UNR1115, UNR1116, UNR1117, UNR1118, UNR1119, UNR111D, UNR111E, UNR111F

Keywords - UNR1114 pdf specs

 UNR1114 cross reference

 UNR1114 equivalent finder

 UNR1114 pdf lookup

 UNR1114 substitution

 UNR1114 replacement