All Transistors. UNR1118 Datasheet

 

UNR1118 Datasheet and Replacement


   Type Designator: UNR1118
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: M-A1
 
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UNR1118 Datasheet (PDF)

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Datasheet: UNR1110 , UNR1111 , UNR1112 , UNR1113 , UNR1114 , UNR1115 , UNR1116 , UNR1117 , MPSA42 , UNR1119 , UNR111D , UNR111E , UNR111F , UNR111H , UNR111L , UNR1210 , UNR1211 .

History: BU508AF | 2SB721

Keywords - UNR1118 transistor datasheet

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