UNR111E Specs and Replacement

Type Designator: UNR111E

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: M-A1

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UNR111E datasheet

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Detailed specifications: UNR1113, UNR1114, UNR1115, UNR1116, UNR1117, UNR1118, UNR1119, UNR111D, D667, UNR111F, UNR111H, UNR111L, UNR1210, UNR1211, UNR1212, UNR1213, UNR1214

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