UNR111L Specs and Replacement
Type Designator: UNR111L
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: M-A1
UNR111L Substitution
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UNR111L datasheet
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Detailed specifications: UNR1116, UNR1117, UNR1118, UNR1119, UNR111D, UNR111E, UNR111F, UNR111H, BD222, UNR1210, UNR1211, UNR1212, UNR1213, UNR1214, UNR1215, UNR1216, UNR1217
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