All Transistors. UNR1210 Datasheet

 

UNR1210 Datasheet and Replacement


   Type Designator: UNR1210
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: M-A1
 

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UNR1210 Datasheet (PDF)

 ..1. Size:263K  panasonic
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UNR1210

Transistors with built-in ResistorUNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/121D/121E/121F/121K/121L(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/Unit: mm121D/121E/121F/121K/121L)2.50.16.90.1(1.0)(1.5)(1.5)Silicon NPN epitaxial planar transistorR 0.9For digital circuitsR 0.7Features Costs can be reduced through downsizing of the equipment

Datasheet: UNR1117 , UNR1118 , UNR1119 , UNR111D , UNR111E , UNR111F , UNR111H , UNR111L , TIP41C , UNR1211 , UNR1212 , UNR1213 , UNR1214 , UNR1215 , UNR1216 , UNR1217 , UNR1218 .

History: LMBT6427LT1G | 2SD438MP | 2SC859FP | SU190 | UNR921DJ | 2SC1501 | BTA1952I3

Keywords - UNR1210 transistor datasheet

 UNR1210 cross reference
 UNR1210 equivalent finder
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