UNR1212 Specs and Replacement

Type Designator: UNR1212

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: M-A1

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UNR1212 datasheet

 8.1. Size:263K  panasonic

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UNR1212

Transistors with built-in Resistor UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ Unit mm 121D/121E/121F/121K/121L) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Silicon NPN epitaxial planar transistor R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment... See More ⇒

Detailed specifications: UNR1119, UNR111D, UNR111E, UNR111F, UNR111H, UNR111L, UNR1210, UNR1211, TIP41C, UNR1213, UNR1214, UNR1215, UNR1216, UNR1217, UNR1218, UNR1219, UNR121D

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