UNR121E Datasheet, Equivalent, Cross Reference Search
Type Designator: UNR121E
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: M-A1
UNR121E Transistor Equivalent Substitute - Cross-Reference Search
UNR121E Datasheet (PDF)
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Transistors with built-in ResistorUNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/121D/121E/121F/121K/121L(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/Unit: mm121D/121E/121F/121K/121L)2.50.16.90.1(1.0)(1.5)(1.5)Silicon NPN epitaxial planar transistorR 0.9For digital circuitsR 0.7Features Costs can be reduced through downsizing of the equipment
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
