All Transistors. STA3073F Datasheet

 

STA3073F Datasheet and Replacement


   Type Designator: STA3073F
   SMD Transistor Code: P73
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 240 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-89
 

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STA3073F Datasheet (PDF)

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STA3073F

STA3073FPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features High collector breakdown voltage : VCEO=-120V Low collector saturation voltage : VCE(sat)=-0.5V(Max.) SOT-89 Ordering Information Type NO. Marking Package Code STA3073F P73 SOT-89Marking Diagram Column 1: Device Code

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STA3073F

NPN DarlingtonSTA303A General purpose/3-phase motor drive External dimensions STA (8-pin)CElectrical characteristicsAbsolute maximum ratings(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 100 AVCB=120VVCEO 100 V IEBO 10 mA VEB=6VVEBO 6V VCEO 100 V IC=10mAIC 4A hFE 1000 VCE=4V, IC=2AICP 8 (PW10ms, D

 9.2. Size:29K  sanken-ele
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STA3073F

NPN DarlingtonSTA301A With built-in avalanche diode External dimensions STA (8-pin)CAbsolute maximum ratings Electrical characteristics(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 6010 V ICBO 100 AVCB=50VVCEO 6010 V IEBO 10 mA VEB=6VVEBO 6V VCEO 50 60 70 V IC=10mAIC 4A hFE 1000 VCE=4V, IC=3AICP 8 (PW10ms

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AC180L | RCP133A | KC817-16 | HN2E04F | KSC184V | FMBM5551 | FMMT3904

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