All Transistors. STA3073F Datasheet

 

STA3073F Datasheet and Replacement


   Type Designator: STA3073F
   SMD Transistor Code: P73
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 240 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-89
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STA3073F Datasheet (PDF)

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STA3073F

STA3073FPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features High collector breakdown voltage : VCEO=-120V Low collector saturation voltage : VCE(sat)=-0.5V(Max.) SOT-89 Ordering Information Type NO. Marking Package Code STA3073F P73 SOT-89Marking Diagram Column 1: Device Code

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STA3073F

NPN DarlingtonSTA303A General purpose/3-phase motor drive External dimensions STA (8-pin)CElectrical characteristicsAbsolute maximum ratings(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 100 AVCB=120VVCEO 100 V IEBO 10 mA VEB=6VVEBO 6V VCEO 100 V IC=10mAIC 4A hFE 1000 VCE=4V, IC=2AICP 8 (PW10ms, D

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STA3073F

NPN DarlingtonSTA301A With built-in avalanche diode External dimensions STA (8-pin)CAbsolute maximum ratings Electrical characteristics(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 6010 V ICBO 100 AVCB=50VVCEO 6010 V IEBO 10 mA VEB=6VVEBO 6V VCEO 50 60 70 V IC=10mAIC 4A hFE 1000 VCE=4V, IC=3AICP 8 (PW10ms

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History: KT8107D2 | UN9113 | PMBS3904 | UN9217R | 2N1056 | 2SC999A | ECG2306

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