All Transistors. STA3250D Datasheet

 

STA3250D Datasheet and Replacement


   Type Designator: STA3250D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 215 MHz
   Collector Capacitance (Cc): 24 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO-252
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STA3250D Datasheet (PDF)

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STA3250D

STA3250DPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A TO-252 Small and compact SMD type package Green device and RoHS compliant device Available in full

 7.1. Size:543K  auk
 sta3250f.pdf pdf_icon

STA3250D

STA3250F PNP Silicon Transistor Applications Power amplifier application High current switching application Emitter3BaseFeatures 1 Low saturation voltage: V =-0.15V Typ @ I =-1A, I =-50mA CE(sat) C BCollector2,4 Large collector current capacity: I =-2A C Small and compact SMD type package SOT-89 Complementary pair with STC4250F Orde

 7.2. Size:374K  auk
 sta3250q.pdf pdf_icon

STA3250D

STA3250QPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package SOT-223 Ordering Information Type NO. Marking Package Code STA3250Q SOT-223 S

 9.1. Size:28K  sanken-ele
 sta322a.pdf pdf_icon

STA3250D

PNPGeneral purposeSTA322A External dimensions STA (8-pin)CAbsolute maximum ratings Electrical characteristics(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 50 V ICBO 10 AVCB=50VVCEO 50 V IEBO 10 AVEB=8VVEBO 5V VCEO 50 V IC=25mAIC 3A hFE 100 350 VCE=4V, IC=1AICP 5 (PW1

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History: 2SC5433 | DTD114E | CMLT4413 | ZX5T853G | 2SC1353 | KT684A | UNR221L

Keywords - STA3250D transistor datasheet

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