All Transistors. 2N6363 Datasheet

 

2N6363 Datasheet and Replacement


   Type Designator: 2N6363
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO129
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2N6363 Datasheet (PDF)

 9.1. Size:449K  1
 2n6368.pdf pdf_icon

2N6363

 9.2. Size:148K  jmnic
 2n6360.pdf pdf_icon

2N6363

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION1 Base 2 Emit

 9.3. Size:116K  inchange semiconductor
 2n6360.pdf pdf_icon

2N6363

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | MJE2480 | 2PB709AXW | KRA741U

Keywords - 2N6363 transistor datasheet

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