2N6364 Specs and Replacement
Type Designator: 2N6364
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO129
2N6364 Substitution
- BJT ⓘ Cross-Reference Search
2N6364 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒
Detailed specifications: 2N6358 , 2N6359 , 2N635A , 2N636 , 2N6360 , 2N6361 , 2N6362 , 2N6363 , BD335 , 2N6365 , 2N6365A , 2N6366 , 2N6367 , 2N6368 , 2N6369 , 2N636A , 2N637 .
Keywords - 2N6364 pdf specs
2N6364 cross reference
2N6364 equivalent finder
2N6364 pdf lookup
2N6364 substitution
2N6364 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet


