2N6365 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6365
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
2N6365 Transistor Equivalent Substitute - Cross-Reference Search
2N6365 Datasheet (PDF)
2n6360.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION1 Base 2 Emit
2n6360.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION
Datasheet: 2N6359 , 2N635A , 2N636 , 2N6360 , 2N6361 , 2N6362 , 2N6363 , 2N6364 , 8050 , 2N6365A , 2N6366 , 2N6367 , 2N6368 , 2N6369 , 2N636A , 2N637 , 2N6370 .
