2N6367 Specs and Replacement
Type Designator: 2N6367
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO218
2N6367 Substitution
- BJT ⓘ Cross-Reference Search
2N6367 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒
Detailed specifications: 2N6360 , 2N6361 , 2N6362 , 2N6363 , 2N6364 , 2N6365 , 2N6365A , 2N6366 , BC546 , 2N6368 , 2N6369 , 2N636A , 2N637 , 2N6370 , 2N6371 , 2N6372 , 2N6373 .
History: PMST5551
Keywords - 2N6367 pdf specs
2N6367 cross reference
2N6367 equivalent finder
2N6367 pdf lookup
2N6367 substitution
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History: PMST5551
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