DN030E Specs and Replacement
Type Designator: DN030E
SMD Transistor Code: N01
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-523
DN030E Substitution
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DN030E datasheet
DN030E Semiconductor Semiconductor NPN Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA) Suitable for low voltage large current drivers Complementary pair with DP030E Switching Application Ordering Information Type NO. Marking Package Code DN030E N01 SOT-523F Outline Dimensions unit mm... See More ⇒
DN030U NPN Silicon Transistor Features PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA) Suitable for low voltage large current drivers 3 Complementary pair with DP030U Switching Application 1 2 SOT-323 Ordering Information Type NO. Marking Package Code NO1 DN030U SOT-323F ... See More ⇒
DN030 NPN Silicon Transistor Features PIN Connection Extremely low collector-to-emitter C saturation voltage ( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA) Suitable for low voltage large current drivers B Complementary pair with DP030 Switching Application E TO-92 Ordering Information Type NO. Marking Package Code DN030 DNO30 TO-92 Absolute maximum... See More ⇒
Detailed specifications: BC856UF, BC857F, BC857U, BC857UF, BC858F, BC858U, BC858UF, DN030, 431, DN030S, DN030U, DN050, DN050S, DN100, DN100S, DN200, DN200F
Keywords - DN030E pdf specs
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