DN500 Specs and Replacement

Type Designator: DN500

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO-92

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DN500 datasheet

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DN500

DN500 Semiconductor Semiconductor NPN Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150mA) Suitable for low voltage large current drivers Complementary pair with DP500 Switching Application Ordering Information Type NO. Marking Package Code DN500 DN500 TO-92 Outline Dimensions un... See More ⇒

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DN500

DN500P Semiconductor Semiconductor NPN Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150mA) Suitable for low voltage large current drivers Complementary pair with DP500P Switching Application Ordering Information Type NO. Marking Package Code DN500P N5 SOT-223 monthly code ... See More ⇒

Detailed specifications: DN030S, DN030U, DN050, DN050S, DN100, DN100S, DN200, DN200F, D667, DN500F, DN500P, DP030, DP030E, DP030S, DP030U, DP100, DP100S

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