DP030 Datasheet and Replacement

Z DP030SemiconductorSemiconductorPNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) Suitable for low voltage large current drivers Complementary pair with DN030 Switching ApplicationOrdering InformationType NO. Marking Package Code DP030 DP030 TO-92Outline Dimensions unit :

June 2009FDP030N06 N-Channel PowerTrench MOSFET60V, 193A, 3.2mFeatures Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

November 2013FDP030N06B_F102N-Channel PowerTrench MOSFET60 V, 195 A, 3.1 mFeatures Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching perfor

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DP030ESemiconductorSemiconductorPNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) Suitable for low voltage large current drivers Complementary pair with DN030E Switching ApplicationOrdering InformationType NO. Marking Package Code DP030E P01 SOT-523FOutline Dimensions unit

DP030USemiconductorSemiconductorPNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN030U Switching ApplicationOrdering InformationType NO. Marking Package Code DP030U P01 SOT-

DP030SSemiconductorSemiconductorPNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) Suitable for low voltage large current drivers Complementary pair with DN030S Switching ApplicationOrdering InformationType NO. Marking Package Code DP030S P01 SOT-23FOutline Dimensions unit :

isc N-Channel MOSFET Transistor FDP030N06FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA