All Transistors. STD123UF Datasheet

 

STD123UF Datasheet, Equivalent, Cross Reference Search


   Type Designator: STD123UF
   SMD Transistor Code: 123
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-323F

 STD123UF Transistor Equivalent Substitute - Cross-Reference Search

   

STD123UF Datasheet (PDF)

 ..1. Size:148K  auk
std123uf.pdf

STD123UF STD123UF

STD123UFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

 7.1. Size:245K  auk
std123u.pdf

STD123UF STD123UF

STD123UNPN Silicon TransistorFeatures PIN Connection Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability 3 Low on resistance : RON=0.6(Max.) (IB=1mA) 1 2SOT-323 Ordering Information Type NO. Marking Package Cod

 8.1. Size:324K  auk
std123s.pdf

STD123UF STD123UF

STD123S NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage COLLECTOR3 Suitable for low voltage large current drivers 3 High DC current gain and large current capability 1 Low on resistance : R =0.6(Max.) (I =1mA) ON BBASEOrdering Information 2EMITTERPart Number Marking P

 8.2. Size:256K  auk
std123as.pdf

STD123UF STD123UF

STD123ASNPN Silicon TransistorPIN ConnectionFeatures High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. SOT-23 Ordering Information Type NO. Marking Package Code 12A STD123AS SOT-23 Device Code Year&Week Co

 8.3. Size:257K  auk
std123asf.pdf

STD123UF STD123UF

STD123ASFNPN Silicon TransistorFeatures PIN Connection High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. 3 Application for IRED Drive transistor in remote transmitter. 1 2 SOT-23F Ordering Information Type NO. Marking Package Code 12A STD123ASF SOT-23F Device Code

 8.4. Size:174K  auk
std123.pdf

STD123UF STD123UF

STD123NPN Silicon TransistorFeatures PIN Connection Low saturation medium current application C Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability B Low on resistance : RON=0.6(Max.) (IB=1mA) E TO-92 Ordering Information Type NO. Marking Package Code

 8.5. Size:202K  auk
std123sf.pdf

STD123UF STD123UF

STD123SFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

 8.6. Size:707K  jiangsu
std123s.pdf

STD123UF STD123UF

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR (NPN)SOT-23 FEATURES Low saturation medium current application1. BASE Extremely low collector saturation voltage2. EMITTER Suitable for low voltage large current drivers3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(M

 8.7. Size:939K  htsemi
std123s.pdf

STD123UF STD123UF

STD1 23STRANSISTOR(NPN)SOT-23 FEATURES Low saturation medium current application 1. BASE Extremely low collector saturation voltage 2. EMITTER Suitable for low voltage large current drivers 3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 MAXIMUM RATINGS (TA=25 unless otherwise noted)

 8.8. Size:211K  lge
std123s.pdf

STD123UF STD123UF

STD123S SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 Dimensions in inches and (millimeters)MA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top