SUT510EF Specs and Replacement

Type Designator: SUT510EF

SMD Transistor Code: 4X

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60(50) V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2(4) pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-563F

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SUT510EF datasheet

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SUT510EF

SUT510EF Epitaxial planar PNP/NPN silicon transistor Description Complex type bipolar transistor Feature Very small package save PCB area Reduce quantity of parts and mounting cost Both 2SA1980 chip and 2SC5343 chip in SOT-563F package Package SOT-563F Ordering Information Type NO. Marking Package Code SUT510EF SOT-563F 4X Year & Week Code ... See More ⇒

Detailed specifications: SUT485J, SUT486J, SUT487J, SUT488J, SUT495J, SUT497H, SUT507EF, SUT509EF, 2SD1047, SUT562EF, SUT575EF, 4124, 4126, 4128, 5302, 13002AH, 13003ADA

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