MJE13005K Specs and Replacement
Type Designator: MJE13005K
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-220
TO-251
TO-252
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MJE13005K datasheet
6.1. Size:311K motorola
mje13005.pdf 
Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high voltage, high speed power switching 75 WATTS inductive circuits where fall time is critical. They are particula... See More ⇒
6.2. Size:60K st
mje13005.pdf
MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-... See More ⇒
6.3. Size:72K central
mje13004 mje13005.pdf
DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage ... See More ⇒
6.4. Size:114K central
mje13005.pdf
DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Co... See More ⇒
6.5. Size:150K onsemi
mje13005g.pdf
MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator s, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NP... See More ⇒
6.6. Size:118K utc
mje13005d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC... See More ⇒
6.7. Size:115K utc
mje13005d-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in ... See More ⇒
6.8. Size:393K utc
mje13005-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 ... See More ⇒
6.9. Size:449K utc
mje13005.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *... See More ⇒
6.10. Size:475K utc
mje13005g.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *... See More ⇒
6.11. Size:51K kec
mje13005d.pdf
SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHAR... See More ⇒
6.12. Size:442K kec
mje13005f.pdf
SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times ton=0.8 S(Max.), at IC=2A S(Max.), tf=0.9 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC S... See More ⇒
6.13. Size:375K kec
mje13005df.pdf
SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM R... See More ⇒
6.14. Size:857K kec
mje13005dc.pdf
SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec... See More ⇒
6.15. Size:436K kec
mje13005.pdf
SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING... See More ⇒
6.16. Size:52K hsmc
hmje13005.pdf
Spec. No. HE6741 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25 C) A Maximum Temperatures Stora... See More ⇒
6.20. Size:439K blue-rocket-elect
mje13005t8.pdf
MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light... See More ⇒
6.21. Size:460K blue-rocket-elect
mje13005p8.pdf
MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr... See More ⇒
6.22. Size:470K blue-rocket-elect
mje13005p7.pdf
MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin... See More ⇒
6.23. Size:467K blue-rocket-elect
mje13005lp7.pdf
MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light... See More ⇒
6.24. Size:273K nell
mje13005a.pdf
RoHS MJE13005A(NPN) RoHS SEMICONDUCTOR Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES VCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION These devices are designed for high-... See More ⇒
6.25. Size:299K first silicon
mje13005t.pdf
SEMICONDUCTOR MJE13005T TECHNICAL DATA MJE13005T TRANSISTOR (NPN) unit High frequency electronic lighting switching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25 ) 1.25 W C P (Tc=25 ) 50 W C T 150 j T -55 150 stg Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit... See More ⇒
6.26. Size:251K first silicon
mje13005f.pdf
SEMICONDUCTOR MJE13005F TECHNICAL DATA C MJE13005F TRANSISTOR (NPN) A SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625 0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + FEATURES L M _ H 0 45 0 1 ... See More ⇒
6.27. Size:235K foshan
mje13005drb.pdf
MJE13005DRB NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25 ) ... See More ⇒
6.28. Size:244K foshan
mje13005dq3.pdf
MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P ... See More ⇒
6.29. Size:204K foshan
mje13005dt7.pdf
MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A... See More ⇒
6.30. Size:154K foshan
mje13005t7.pdf
MJE13005T7(3DD13005T7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A ... See More ⇒
6.31. Size:249K foshan
mje13005q7.pdf
MJE13005Q7(3DD13005Q7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P ... See More ⇒
6.32. Size:168K foshan
mje13005vt7.pdf
MJE13005VT7(3DD13005VT7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2... See More ⇒
6.33. Size:193K foshan
mje13005dt3.pdf
MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B ... See More ⇒
6.34. Size:248K foshan
mje13005dq7.pdf
MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P ... See More ⇒
6.35. Size:239K foshan
mje13005dq5.pdf
MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P ... See More ⇒
6.36. Size:292K foshan
mje13005dp5.pdf
MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C ... See More ⇒
6.37. Size:251K foshan
mje13005dq4.pdf
MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T... See More ⇒
6.38. Size:220K inchange semiconductor
mje13005d.pdf
Isc Silicon NPN Power Transistor MJE13005D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
6.39. Size:154K inchange semiconductor
mje13005.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13005 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;... See More ⇒
Detailed specifications: MJE13001, MJE13001P, MJE13002-E, MJE13003D, MJE13003DP, MJE13003-E, MJE13003P, MJE13005DK, 2222A, MJE13007D, MJE13007M, MJE13009D, MJE13009K, MJE13009P, MMBT9018, MPSA194, MPSA44H
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