MPSA194 Specs and Replacement

Type Designator: MPSA194

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO-92 TO-92NL

 MPSA194 Substitution

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MPSA194 datasheet

 ..1. Size:147K  utc

mpsa194.pdf pdf_icon

MPSA194

UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. FEATURES * Collector-Emitter Voltage V =400V CEO * Power Dissipation 1.0W 1 TO-92NL APPLICATIONS *... See More ⇒

 9.1. Size:225K  motorola

mpsa13 mpsa14.pdf pdf_icon

MPSA194

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 TO 92 (TO 226AA) Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 V... See More ⇒

 9.2. Size:278K  motorola

mpsa18 mpsa18re.pdf pdf_icon

MPSA194

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA18/D Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 45 Vdc Emitter Base Voltage VEBO 6.5 Vdc Colle... See More ⇒

 9.3. Size:49K  philips

mpsa14 4.pdf pdf_icon

MPSA194

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2 b... See More ⇒

Detailed specifications: MJE13005DK, MJE13005K, MJE13007D, MJE13007M, MJE13009D, MJE13009K, MJE13009P, MMBT9018, 2SC2240, MPSA44H, PZT1816, PZT4033, SB2202, T2096, TC200, TUL1102, TUL1203

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