TUL1102 Datasheet, Equivalent, Cross Reference Search
Type Designator: TUL1102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO-220 TO-252 TO-263 TO-220F1
TUL1102 Transistor Equivalent Substitute - Cross-Reference Search
TUL1102 Datasheet (PDF)
tul1102.pdf
UNISONIC TECHNOLOGIES CO., LTD TUL1102 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The TUL1102 is manufactured which is using high voltageMulti Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds whilemaintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CDQ10008 | CHDTA114EUGP
History: CDQ10008 | CHDTA114EUGP
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