UN1066 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN1066
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO-252 SOT-89
UN1066 Transistor Equivalent Substitute - Cross-Reference Search
UN1066 Datasheet (PDF)
un1066.pdf
UNISONIC TECHNOLOGIES CO., LTD UN1066 NPN SILICON TRANSISTOR HIGH SPEED SWITCHING TRANSISTOR FEATURES * Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- UN1066G-AB3-R SOT-89 B C E Tape ReelUN1066L-TN3-R UN1066G-TN3-R TO-
sun1060f.pdf
SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=0.6 (Typ.) Low gate charge: Qg=27nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN1060F SUN1060 TO
sun1060i2.pdf
SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=0.6 (Typ.) Low gate charge: Qg=27nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN1060I2 SUN1060 I2-PA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
