UN1066 Specs and Replacement
Type Designator: UN1066
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 250
UN1066 Substitution
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UN1066 datasheet
UNISONIC TECHNOLOGIES CO., LTD UN1066 NPN SILICON TRANSISTOR HIGH SPEED SWITCHING TRANSISTOR FEATURES * Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - UN1066G-AB3-R SOT-89 B C E Tape Reel UN1066L-TN3-R UN1066G-TN3-R TO-... See More ⇒
SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=0.6 (Typ.) Low gate charge Qg=27nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN1060F SUN1060 TO... See More ⇒
SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=0.6 (Typ.) Low gate charge Qg=27nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN1060I2 SUN1060 I2-PA... See More ⇒
Detailed specifications: T2096, TC200, TUL1102, TUL1203, UBV45, ULB121, ULB122, ULB124, TIP32C, UN1518, UN1596, UP1496, UP1753, UP1851, UP1853, UP1855, UP1855A
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