D882SS Specs and Replacement
Type Designator: D882SS
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
- BJT ⓘ Cross-Reference Search
D882SS datasheet
..1. Size:175K utc
d882ss.pdf 
UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 D882SSG-x-AE3-R SOT-2... See More ⇒
9.1. Size:184K utc
2sd882s.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 FEATURES SOT-223 SOT-89 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1 * Audio power amplifier TO-92 * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing ... See More ⇒
9.2. Size:209K secos
d882s.pdf
D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H J Millimeter REF. A D Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B B 4.30 4.70 C 12.70 - K D 3.30 3.81 E 0.36 0.56 Rank R 0 Y GR F 0.36 0.51 E C F G 1.27 TYP. 60-120 160-320 200-... See More ⇒
9.3. Size:244K taiwansemi
tsd882s.pdf
TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition Pin Definition PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSB... See More ⇒
9.4. Size:202K jiangsu
d882s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURES 1.EMITTER Power dissipation 2.COLLECTOR 3.BASE Equivalent Circuit 1 ... See More ⇒
9.5. Size:206K lge
d882s.pdf
D882S Transistor(NPN) 1.EMITTER TO-92 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters) PC Collector Power Dissipati... See More ⇒
9.6. Size:55K hsmc
hsd882s.pdf
Spec. No. HE6544 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/5 HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................... See More ⇒
9.7. Size:249K cystek
btd882st3.pdf
Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline ... See More ⇒
9.8. Size:302K cystek
btd882sa3.pdf
Spec. No. C848A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h... See More ⇒
9.10. Size:230K pjsemi
2sd882sq-r 2sd882sq-q 2sd882sq-p 2sd882sq-e.pdf
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ Applications PIN1 Base PIN 2 Collector PIN 3 Emitter These devices are intended for use in audio frequency power amplifier and low speed switching applications 2C 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S... See More ⇒
9.11. Size:1508K cn shikues
d882s-r d882s-q d882s-p d882s-e.pdf
D882S NPN Silicon Power Transistor SOT-23 The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A ... See More ⇒
9.12. Size:1081K cn juxing
2sd882sq.pdf
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ PIN1 Base PIN 2 Collector PIN 3 Emitter Applications 2C These devices are intended for use in audio frequency power amplifier and low speed switching applications 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S... See More ⇒
Detailed specifications: USS4350, USS4450, USS5350, UT2274, X1049A, 2SC2328A, 2SD882S, 8050S, 2N3055, HE8051, MMBT1815, MMBT9013, MMBT9014, MMBT945, MN2510, 2SA928A, 2SB772S
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