All Transistors. D882SS Datasheet

 

D882SS Datasheet, Equivalent, Cross Reference Search


   Type Designator: D882SS
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

 D882SS Transistor Equivalent Substitute - Cross-Reference Search

   

D882SS Datasheet (PDF)

 ..1. Size:175K  utc
d882ss.pdf

D882SS
D882SS

UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3D882SSG-x-AE3-R SOT-2

 9.1. Size:184K  utc
2sd882s.pdf

D882SS
D882SS

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR1 1 FEATURES SOT-223 SOT-89* High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1* Audio power amplifier TO-92* DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing

 9.2. Size:209K  secos
d882s.pdf

D882SS
D882SS

D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G HJMillimeterREF. A DMin. Max.CLASSIFICATION OF hFE A 4.40 4.70BB 4.30 4.70C 12.70 -KD 3.30 3.81E 0.36 0.56Rank R 0 Y GRF 0.36 0.51E C F G 1.27 TYP.60-120 160-320 200-

 9.3. Size:244K  taiwansemi
tsd882s.pdf

D882SS
D882SS

TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSB

 9.4. Size:202K  jiangsu
d882s.pdf

D882SS
D882SS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURES 1.EMITTER Power dissipation 2.COLLECTOR 3.BASE Equivalent Circuit 1

 9.5. Size:206K  lge
d882s.pdf

D882SS
D882SS

D882S Transistor(NPN)1.EMITTER TO-922.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters)PC Collector Power Dissipati

 9.6. Size:55K  hsmc
hsd882s.pdf

D882SS
D882SS

Spec. No. : HE6544HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/5HSD882SNPN Epitaxial Planar TransistorDescriptionThe HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relaydriver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................

 9.7. Size:249K  cystek
btd882st3.pdf

D882SS
D882SS

Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

 9.8. Size:302K  cystek
btd882sa3.pdf

D882SS
D882SS

Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp.Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h

 9.9. Size:26K  shantou-huashan
hd882s.pdf

D882SS

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD882S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

 9.10. Size:230K  pjsemi
2sd882sq-r 2sd882sq-q 2sd882sq-p 2sd882sq-e.pdf

D882SS
D882SS

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQApplicationsPIN1Base PIN 2Collector PIN 3EmitterThese devices are intended for use in audio frequencypower amplifier and low speed switching applications2C1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

 9.11. Size:1508K  cn shikues
d882s-r d882s-q d882s-p d882s-e.pdf

D882SS
D882SS

D882SNPN Silicon Power Transistor SOT-23 The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. 1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 A

 9.12. Size:1081K  cn juxing
2sd882sq.pdf

D882SS
D882SS

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQPIN1Base PIN 2Collector PIN 3EmitterApplications2CThese devices are intended for use in audio frequencypower amplifier and low speed switching applications1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MUN2233T1G

 

 
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