MMBT9013 Datasheet PDF and Equivalents Search

 ..1. Size:144K  utc

 mmbt9013.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre... See More ⇒

 0.1. Size:676K  semtech

 mmbt9013g mmbt9013h.pdf

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Po... See More ⇒

 0.2. Size:179K  semtech

 mmbt9013h-h23.pdf

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 0.3. Size:138K  wej

 mmbt9013lt1.pdf

RoHS MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9012 2.EMITTER Collector Current Ic=500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO 40... See More ⇒

 0.4. Size:492K  pjsemi

 mmbt9013-g mmbt9013-h.pdf

MMBT9013 NPN Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT9012 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V... See More ⇒