DTC123J Datasheet. Specs and Replacement

Type Designator: DTC123J  📄📄 

SMD Transistor Code: CC3J

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO-92 TO-92SP SOT-23 SOT-323 SOT-523

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DTC123J datasheet

 ..1. Size:180K  utc

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DTC123J

UNISONIC TECHNOLOGIES CO., LTD DTC123J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. Th... See More ⇒

 ..2. Size:145K  lge

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DTC123J

DTC123JE/DTC123JUA/DTC123JCA DTC123JKA/DTC123JSA Digital Transistor(NPN) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com... See More ⇒

 ..3. Size:306K  first silicon

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DTC123J

SEMICONDUCTOR DTC123J TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the... See More ⇒

 0.1. Size:54K  motorola

pdtc123jef 1.pdf pdf_icon

DTC123J

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

Detailed specifications: DTB143E, DTC113T, DTC114E, DTC114T, DTC114Y, DTC115E, DTC115T, DTC123E, 8550, DTC123Y, DTC124E, DTC124T, DTC143E, DTC143T, DTC143X, DTC143Z, DTC144E

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