BLD102D Specs and Replacement
Type Designator: BLD102D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
BLD102D Substitution
- BJT ⓘ Cross-Reference Search
BLD102D datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD102D NPN D / D SERIES TRANSISTORS BLD102D NPN D / D... See More ⇒
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SE... See More ⇒
Detailed specifications: BUL6822A, BUL6823, BUL6823A, MJE13003BR, MJE13003BRH, 2SB1334A, MJE13009A, BLD101D, 2SD669, BLD112D, BLD122D, BLD122DL, BLD123D, BLD123DAL, BLD123DL, BLD128D, BLD128DA
Keywords - BLD102D pdf specs
BLD102D cross reference
BLD102D equivalent finder
BLD102D pdf lookup
BLD102D substitution
BLD102D replacement
