BLD123DAL pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BLD123DAL Specs and Replacement

Type Designator: BLD123DAL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO126 TO126S TO92 TO92S

BLD123DAL Substitution

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BLD123DAL datasheet

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Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD123D NPN D / D SERIES TRANSISTORS BLD123D NPN D / D... See More ⇒

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Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN / L SERIES TRANSISTORS BLD123DL NPN / L SERIES TRANSISTORS BLD123DL NPN /... See More ⇒

Detailed specifications: 2SB1334A, MJE13009A, BLD101D, BLD102D, BLD112D, BLD122D, BLD122DL, BLD123D, MPSA42, BLD123DL, BLD128D, BLD128DA, BLD13005DX, BLD132D, BLD133DL, BLD135D, BLD135DH