2N6406 Specs and Replacement
Type Designator: 2N6406
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: X104-1
2N6406 Substitution
- BJT ⓘ Cross-Reference Search
2N6406 datasheet
Detailed specifications: 2N6390, 2N6391, 2N6392, 2N6393, 2N639A, 2N639B, 2N64, 2N640, 2SC828, 2N6407, 2N6408, 2N6409, 2N641, 2N6410, 2N6411, 2N6412, 2N6413
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