BTA733A3 Specs and Replacement
Type Designator: BTA733A3
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO92
BTA733A3 Substitution
- BJT ⓘ Cross-Reference Search
BTA733A3 datasheet
Spec. No. C306A3 Issued Date 2003.07.14 CYStech Electronics Corp. Revised Date 2013.09.23 Page No. 1 / 7 General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC945A3. Pb-free package ... See More ⇒
Detailed specifications: BCP56L3, BCP69L3, BCX53M3, BCX56M3, BCX69M3, BF422A3, BF423A3, BTA684K3, D882, BTA928AK3, BTA1013K3, BTA1020K3, BTA1036N3, BTA1036S3, BTA1037N3, BTA1210E3, BTA1210F3
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