BTA1013K3 Datasheet and Replacement
Type Designator: BTA1013K3
SMD Transistor Code: A1013
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92L
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BTA1013K3 Datasheet (PDF)
bta1013k3.pdf

Spec. No. : C233K3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B
bta1012e3.pdf

Spec. No. : C601E3 "BTA1012E3" Issued Date : 2004.07.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1012E3 TO-220AB BBase C
bta1015a3.pdf

Spec. No. : C306A3-T "BTA1015A3" Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current : V =-50V(min), I =-150mA(max) CEO C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KSC815O | KSC815 | TIP36CA | TIP35B | TIP35A | OC815 | TIP505
Keywords - BTA1013K3 transistor datasheet
BTA1013K3 cross reference
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History: KSC815O | KSC815 | TIP36CA | TIP35B | TIP35A | OC815 | TIP505



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