BTA1210J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA1210J3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO252
BTA1210J3 Transistor Equivalent Substitute - Cross-Reference Search
BTA1210J3 Datasheet (PDF)
bta1210j3.pdf
Spec. No. : C656J3 Issued Date : 2004.05.12 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -120VBTA1210J3 IC -10ARCESAT 270m Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC curr
bta1210f3.pdf
Spec. No. : C656F3 Issued Date : 2007.02.02 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210fp.pdf
Spec. No. : C656FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.09.17 Page No. : 1/6 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210e3.pdf
Spec. No. : C656E3 Issued Date : 2004.06.03 CYStech Electronics Corp.Revised Date :2013.10.11 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210t3.pdf
Spec. No. : C656T3 Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
