2N6410 Specs and Replacement
Type Designator: 2N6410
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: X104-1
2N6410 Substitution
- BJT ⓘ Cross-Reference Search
2N6410 datasheet
Detailed specifications: 2N639B, 2N64, 2N640, 2N6406, 2N6407, 2N6408, 2N6409, 2N641, D882P, 2N6411, 2N6412, 2N6413, 2N6414, 2N6415, 2N6416, 2N6417, 2N6418
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