BTA1576S3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA1576S3
SMD Transistor Code: FR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT323
BTA1576S3 Transistor Equivalent Substitute - Cross-Reference Search
BTA1576S3 Datasheet (PDF)
bta1576s3.pdf
Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2014.01.24 CYStech Electronics Corp. Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating
bta1579s3.pdf
Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2011.09.20 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O
bta1514m3.pdf
Spec. No. : C307M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac
bta1542n3.pdf
Spec. No. : C599N3 Issued Date : 2005.12.30 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA1542N3 Features Large current capability Low collector-to-emitter saturation voltage High speed switching Ultra small package facilitates miniaturization in end products High allowable power dissipation
bta1514n3.pdf
Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2014.04.15 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BVCEO -160VBTA1514N3IC -0.6AVCESAT(MAX) -0.3VDescription The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -16
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC4672R | 2SD761 | 2SB960 | 2SD762
History: 2SC4672R | 2SD761 | 2SB960 | 2SD762
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