BTB772T3 Specs and Replacement

Type Designator: BTB772T3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO126

 BTB772T3 Substitution

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BTB772T3 datasheet

 ..1. Size:229K  cystek

btb772t3.pdf pdf_icon

BTB772T3

Spec. No. C817T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline ... See More ⇒

 8.1. Size:352K  cystek

btb772sa3.pdf pdf_icon

BTB772T3

Spec. No. C817A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77... See More ⇒

 8.2. Size:272K  cystek

btb772j3.pdf pdf_icon

BTB772T3

Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2010.12.08 Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3A RCE(SAT) 225m typ. Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA ... See More ⇒

 8.3. Size:221K  cystek

btb772st3.pdf pdf_icon

BTB772T3

Spec. No. C809T3 Issued Date 2008.08.01 CYStech Electronics Corp. Revised Date Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 B Base C Collector E Emitter E C B Absolute ... See More ⇒

Detailed specifications: BTA9012A3, BTB589N3, BTB718N3, BTB772AJ3, BTB772AM3, BTB772I3, BTB772J3, BTB772ST3, NJW0281G, BTB818AG6, BTB818N6, BTB826M3, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3

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