All Transistors. BTB1198M3 Datasheet

 

BTB1198M3 Datasheet and Replacement


   Type Designator: BTB1198M3
   SMD Transistor Code: AK
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89
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BTB1198M3 Datasheet (PDF)

 ..1. Size:290K  cystek
 btb1198m3.pdf pdf_icon

BTB1198M3

Spec. No. : C824M3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3Features High breakdown voltage, BV -100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTD5213M3 Pb-free lead plating and ha

 7.1. Size:258K  cystek
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BTB1198M3

Spec. No. : C824A3 Issued Date : 2007.02.28 CYStech Electronics Corp.Revised Date : 2012.12.27 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198A3Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 7.2. Size:274K  cystek
 btb1198n3.pdf pdf_icon

BTB1198M3

Spec. No. : C824N3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : 2013.12.13 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -80VIC -1ABTB1198N3RCE(SAT) 320m(typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

 7.3. Size:291K  cystek
 btb1198k3.pdf pdf_icon

BTB1198M3

Spec. No. : C824K3 Issued Date : 2008.10.31 CYStech Electronics Corp.Revised Date :2013.10.09 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198K3Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline

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History: 2SD596DV5 | C8050C | 2SD1376 | 3DA150C | ECG95 | FT1724 | R8066

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