BTB1216J3 Datasheet and Replacement

Spec. No. : C811J3 Issued Date : 2008.12.10 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 PNP Epitaxial Planar High Current (High Performance) Transistor BVCEO -140V BTB1216J3IC -5ARCE(SAT) 90m typ. Features 5 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up t

BTA/BTB12 and T12 SeriesSNUBBERLESS, LOGIC LEVEL & STANDARD 12A TRIACSMAIN FEATURES:A2Symbol Value UnitIT(RMS)12 AGVDRM/VRRM A1600 and 800 VA2IGT (Q1)5 to 50 mADESCRIPTIONA1A2Available either in through-hole or surface-mountGpackages, the BTA/BTB12 and T12 triac series issuitable for general purpose AC switching. TheyD2PAKcan be used as an ON/OFF

Spec. No. : C315J3 Issued Date : 2010.12.31 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BVCEO -160VIC -1.5ABTB1236AJ3RCESAT(MAX) 600m Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AJ3 TO-252(DPAK) BBase CCollector EEmitter B C E Ab

Spec. No. : C854A3 Issued Date : 2004.07.28 CYStech Electronics Corp.Revised Date : 2012.04.27 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236A3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTB1236A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Par

Spec. No. : C315I3 Issued Date : 2012.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AI3Description High BV CEO High current capability Complementary to BTD1857AI3 RoHS compliant package Symbol Outline BTB1236AI3 TO-251 BBase CCollector EEmitter B C E Absolute Maximum Ra

Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BTB1236AM3Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AM3 SOT-89 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Para

Spec. No. : C849M3 Issued Date : 2010.10.28 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BVCEO -240VIC -1ABTB1238AM3VCESAT(Max) -0.3VDescription High BV CEO High current capability Pb-free lead plating and halogen-free package Symbol Outline BTB1238AM3 SOT-89 BBase CCollector E

Spec. No. : C854FP Issued Date : 2011.09.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AFPDescription High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Sym

Spec. No. : C854T3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2006.07.11 Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3Description High BV CEO High current capability Pb-free package Symbol Outline BTB1236AT3 TO-126 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Sy

Spec. No. : C854E3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AE3Description High BV CEO High current capability Symbol Outline BTB1236AE3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-

Spec. No. : C815I3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date : 2010.05.02 Page No. : 1/ 6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20V IC -5ABTB1205I3 RCESAT 127m typ.Features Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Fast switching speed Large current

Spec. No. : C854K3 Issued Date : 2012.10.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236AK3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline TO-92L BTB1236AK3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol

Spec. No. : C849L3 Issued Date : 2012.08.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BVCEO -240VIC -1ABTB1238AL3VCESAT(Max) -0.3VDescription High BV CEO High current capability RoHS compliant package Pb-free lead plating and halogen-free package Symbol Outline BTB1238AL3 SOT-223 C BBa

Spec. No. : C854L3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AL3Description High BV CEO High current capability SymbolBTB1236AL3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO -180 VCol

Spec. No. : C817I3 Issued Date : 2003.07.03 CYStech Electronics Corp.Revised Date : 2012.02.02 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB1243I3 Features Low VCE(sat), VCE(sat)=-0.24 V (typical), at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD1864I3 Pb free package Symbol Outline BTB1243I3 TO-251