All Transistors. BTC2880M3G Datasheet

 

BTC2880M3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTC2880M3G
   SMD Transistor Code: CB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89

 BTC2880M3G Transistor Equivalent Substitute - Cross-Reference Search

   

BTC2880M3G Datasheet (PDF)

 ..1. Size:160K  cystek
btc2880m3g.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C319M3G Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2008.12.22 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2880M3GFeatures High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant and Halogen-free package Symbol Outline B

 5.1. Size:241K  cystek
btc2880m3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C319M3 Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2013.09.23 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2880M3Features High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage Pb-free package Symbol Outline BTC2880M3 SOT-89 BBase

 7.1. Size:187K  cystek
btc2880a3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C319A3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2880A3Description The BTC2880A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High coll

 8.1. Size:236K  cystek
btc2881m3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

 8.2. Size:283K  cystek
btc2882j3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C238J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2882J3IC 1ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 8.3. Size:273K  cystek
btc2881l3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 8.4. Size:225K  cystek
btc2881e3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

 8.5. Size:226K  cystek
btc2881fp.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C316FP Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881FPIC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

 8.6. Size:285K  cystek
btc2881j3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C316J3 Issued Date : 2009.11.17 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881J3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a

 8.7. Size:283K  cystek
btc2883j3.pdf

BTC2880M3G
BTC2880M3G

Spec. No. : C239J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 240VBTC2883J3IC 1.2ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 240V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: GCN55 | 2SA1037AK

 

 
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