All Transistors. BTC2881M3 Datasheet

 

BTC2881M3 Datasheet and Replacement


   Type Designator: BTC2881M3
   SMD Transistor Code: CB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89
 

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BTC2881M3 Datasheet (PDF)

 ..1. Size:236K  cystek
 btc2881m3.pdf pdf_icon

BTC2881M3

Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

 7.1. Size:273K  cystek
 btc2881l3.pdf pdf_icon

BTC2881M3

Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 7.2. Size:225K  cystek
 btc2881e3.pdf pdf_icon

BTC2881M3

Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

 7.3. Size:226K  cystek
 btc2881fp.pdf pdf_icon

BTC2881M3

Spec. No. : C316FP Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881FPIC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

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Datasheet: BTC2655S3 , BTC2880A3 , BTC2880M3 , BTC2880M3G , BTC2881E3 , BTC2881FP , BTC2881J3 , BTC2881L3 , TIP42 , BTC2882J3 , BTC2883J3 , BTC3097T3 , BTC3149E3 , BTC3356N3 , BTC3415A3 , BTC3838N3 , BTC3906L3 .

History: 2SD283 | 2SC108 | KT315N-1 | FH309 | NST3904DXV6T5G | MPSU05 | 2SD345

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