BTC3906L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC3906L3
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT223
BTC3906L3 Transistor Equivalent Substitute - Cross-Reference Search
BTC3906L3 Datasheet (PDF)
btc3906l3.pdf
Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2013.10.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E
btc3906n3.pdf
Spec. No. : C208N3G Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.05.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B
btc3906s3.pdf
Spec. No. : C208S3 Issued Date : 2013.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906S3Description The BTC3906S3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514S3
btc3906m3.pdf
Spec. No. : C208M3 Issued Date : 2003.08.18 CYStech Electronics Corp.Revised Date :2013.08.05 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906M3Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA
btc3906n3g.pdf
Spec. No. : C208N3G Issued Date : 2008.12.11 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906N3GDescription The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514N3G
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GD619
