BTD882ST3 Specs and Replacement

Type Designator: BTD882ST3

SMD Transistor Code: D882.

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 270 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO126

 BTD882ST3 Substitution

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BTD882ST3 datasheet

 ..1. Size:249K  cystek

btd882st3.pdf pdf_icon

BTD882ST3

Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline ... See More ⇒

 7.1. Size:302K  cystek

btd882sa3.pdf pdf_icon

BTD882ST3

Spec. No. C848A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h... See More ⇒

 8.1. Size:302K  cystek

btd882j3.pdf pdf_icon

BTD882ST3

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli... See More ⇒

 8.2. Size:320K  cystek

btd882t3.pdf pdf_icon

BTD882ST3

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out... See More ⇒

Detailed specifications: BTC9013A3, BTC9014A3, BTD142F3, BTD882AM3, BTD882D3, BTD882I3, BTD882J3, BTD882SA3, B647, BTD882T3, BTD965A3, BTD965LA3, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3

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