BTD965LA3 Specs and Replacement

Type Designator: BTD965LA3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 170 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 390

Noise Figure, dB: -

Package: TO92

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BTD965LA3 datasheet

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BTD965LA3

Spec. No. C852A3 Issued Date 2004.07.02 CYStech Electronics Corp. Revised Date 2007.04.18 Page No. 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy... See More ⇒

 8.1. Size:246K  cystek

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BTD965LA3

Spec. No. C847N3 Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date 2013.01.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B Base C Collector ... See More ⇒

 8.2. Size:236K  cystek

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BTD965LA3

Spec. No. C847A3 Issued Date 2003.04.01 CYStech Electronics Corp. Revised Date 2011.02.14 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package ... See More ⇒

Detailed specifications: BTD882AM3, BTD882D3, BTD882I3, BTD882J3, BTD882SA3, BTD882ST3, BTD882T3, BTD965A3, BD333, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, BTD1616AM3, BTD1664M3

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