All Transistors. BTD1383L3 Datasheet

 

BTD1383L3 Datasheet and Replacement


   Type Designator: BTD1383L3
   SMD Transistor Code: WA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 20000
   Noise Figure, dB: -
   Package: SOT223
 

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BTD1383L3 Datasheet (PDF)

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BTD1383L3

Spec. No. : C214L3 Issued Date : 2005.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1383L3Description The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3SOT-223 C CB E C BBase B CCollector E EEmitter Absolute Maximum Ratings (Ta=25C) Parameter

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BTD1383L3

Spec. No. : C214M3 Issued Date : 2006.11.10 CYStech Electronics Corp.Revised Date : 2013.08.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1383M3Description The BTD1383M3 is a darlington amplifier transistor. Pb-free package Symbol Outline SOT-89 BTD1383M3C B BBase B C E CCollector E EEmitter Absolute Maximum Ratin

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BTD1383L3

Spec. No. : C857A3 Issued Date : 2013.03.26 CYStech Electronics Corp.Revised Date : Page No. : 1/8 NPN Epitaxial Planar Transistor BVCEO 20VAUDIO MUTING APPLICATION IC 500mARCE(SAT) 0.3(typ) BTD1304A3 Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6(max)@IB=1mA.

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BTD1383L3

Spec. No. : C857N3 Issued Date : 2011.03.31 CYStech Electronics Corp.Revised Date : 2011.04.01 Page No. : 1/8 NPN Epitaxial Planar Transistor BVCEO 20VAUDIO MUTING APPLICATION IC 500mARCE(SAT) 0.3(typ) BTD1304N3 Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6(max)@IB

Datasheet: BTD882SA3 , BTD882ST3 , BTD882T3 , BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BD139 , BTD1383M3 , BTD1616AA3 , BTD1616AM3 , BTD1664M3 , BTD1760J3 , BTD1766M3 , BTD1768A3 , BTD1768BA3 .

History: NSVDTA114EET1G | BDS10IG

Keywords - BTD1383L3 transistor datasheet

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