BTD1616AA3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD1616AA3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
BTD1616AA3 Transistor Equivalent Substitute - Cross-Reference Search
BTD1616AA3 Datasheet (PDF)
btd1616aa3.pdf
Spec. No. : C602A3 Issued Date : 2009.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AA3IC 1ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package
btd1616am3.pdf
Spec. No. : C602M3 Issued Date : 2009.04.01 CYStech Electronics Corp.Revised Date :2014.03.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AM3IC 3AVCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h
btd1664m3.pdf
Spec. No. : C223M3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date :2013.08.07 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1.5ABTD1664M3 RCESAT 0.31(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
