All Transistors. BTD1616AA3 Datasheet

 

BTD1616AA3 Datasheet and Replacement


   Type Designator: BTD1616AA3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

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BTD1616AA3 Datasheet (PDF)

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BTD1616AA3

Spec. No. : C602A3 Issued Date : 2009.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AA3IC 1ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package

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BTD1616AA3

Spec. No. : C602M3 Issued Date : 2009.04.01 CYStech Electronics Corp.Revised Date :2014.03.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AM3IC 3AVCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h

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BTD1616AA3

Spec. No. : C223M3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date :2013.08.07 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1.5ABTD1664M3 RCESAT 0.31(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA

Datasheet: BTD882T3 , BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BTD1383L3 , BTD1383M3 , 2N5551 , BTD1616AM3 , BTD1664M3 , BTD1760J3 , BTD1766M3 , BTD1768A3 , BTD1768BA3 , BTD1768M3 , BTD1768N3 .

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