BTD1616AA3 PDF Specs and Replacements, Transistor Equivalent Finder, Cross Reference

BTD1616AA3 PDF Specs and Replacement

   Type Designator: BTD1616AA3
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

Electrical Characteristics

   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

BTD1616AA3 Substitution

- BJT ⓘ Cross-Reference Search

BTD1616AA3 PDF detailed specifications

..1. Size:248K cystek
btd1616aa3.pdf pdf_icon

Spec. No. C602A3 Issued Date 2009.05.14 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AA3 IC 1A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package ... See More ⇒

6.1. Size:304K cystek
btd1616am3.pdf pdf_icon

Spec. No. C602M3 Issued Date 2009.04.01 CYStech Electronics Corp. Revised Date 2014.03.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AM3 IC 3A VCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h... See More ⇒

9.1. Size:239K cystek
btd1664m3.pdf pdf_icon

Spec. No. C223M3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25V IC 1.5A BTD1664M3 RCESAT 0.31 (typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA ... See More ⇒

Detailed specifications: BTD882T3 , BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BTD1383L3 , BTD1383M3 , BD139 , BTD1616AM3 , BTD1664M3 , BTD1760J3 , BTD1766M3 , BTD1768A3 , BTD1768BA3 , BTD1768M3 , BTD1768N3 .