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BTD1768A3 PDF Specs and Replacement


   Type Designator: BTD1768A3
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
 

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BTD1768A3 PDF detailed specifications

 ..1. Size:248K  cystek
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BTD1768A3

Spec. No. C304A3 Issued Date 2003.07.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m... See More ⇒

 7.1. Size:243K  cystek
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BTD1768A3

Spec. No. C304A3-B Issued Date 2006.08.21 CYStech Electronics Corp. Revised Date 2010.07.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80... See More ⇒

 7.2. Size:255K  cystek
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BTD1768A3

Spec. No. C304N3 Issued Date 2005.01.10 CYStech Electronics Corp. Revised Date 2010.10.20 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m... See More ⇒

 7.3. Size:232K  cystek
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BTD1768A3

Spec. No. C310M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 B Base B C E ... See More ⇒

Detailed specifications: BTD1304N3 , BTD1383L3 , BTD1383M3 , BTD1616AA3 , BTD1616AM3 , BTD1664M3 , BTD1760J3 , BTD1766M3 , C1815 , BTD1768BA3 , BTD1768M3 , BTD1768N3 , BTD1768S3 , BTD1782N3 , BTD1805AD3 , BTD1805BT3 , BTD1805F3 .

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