All Transistors. BTD1768A3 Datasheet

 

BTD1768A3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTD1768A3

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

BTD1768A3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTD1768A3 Datasheet (PDF)

0.1. btd1768a3.pdf Size:248K _cystek

BTD1768A3
BTD1768A3

Spec. No. : C304A3 Issued Date : 2003.07.28 CYStech Electronics Corp.Revised Date :2012.12.27 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

7.1. btd1768ba3.pdf Size:243K _cystek

BTD1768A3
BTD1768A3

Spec. No. : C304A3-B Issued Date : 2006.08.21 CYStech Electronics Corp.Revised Date :2010.07.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80

7.2. btd1768s3.pdf Size:258K _cystek

BTD1768A3
BTD1768A3

Spec. No. : C304S3 Issued Date : 2009.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80VIC 1ABTD1768S3RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High

 7.3. btd1768m3.pdf Size:232K _cystek

BTD1768A3
BTD1768A3

Spec. No. : C310M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 BBase B C E

7.4. btd1768n3.pdf Size:255K _cystek

BTD1768A3
BTD1768A3

Spec. No. : C304N3 Issued Date : 2005.01.10 CYStech Electronics Corp.Revised Date :2010.10.20 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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