BTD1768N3 Specs and Replacement

Type Designator: BTD1768N3

SMD Transistor Code: AJ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

 BTD1768N3 Substitution

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BTD1768N3 datasheet

 ..1. Size:255K  cystek

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BTD1768N3

Spec. No. C304N3 Issued Date 2005.01.10 CYStech Electronics Corp. Revised Date 2010.10.20 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m... See More ⇒

 7.1. Size:243K  cystek

btd1768ba3.pdf pdf_icon

BTD1768N3

Spec. No. C304A3-B Issued Date 2006.08.21 CYStech Electronics Corp. Revised Date 2010.07.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80... See More ⇒

 7.2. Size:248K  cystek

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BTD1768N3

Spec. No. C304A3 Issued Date 2003.07.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m... See More ⇒

 7.3. Size:232K  cystek

btd1768m3.pdf pdf_icon

BTD1768N3

Spec. No. C310M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 B Base B C E ... See More ⇒

Detailed specifications: BTD1616AA3, BTD1616AM3, BTD1664M3, BTD1760J3, BTD1766M3, BTD1768A3, BTD1768BA3, BTD1768M3, BC548, BTD1768S3, BTD1782N3, BTD1805AD3, BTD1805BT3, BTD1805F3, BTD1805FP, BTD1805I3, BTD1805J3

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