BTD1805BT3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD1805BT3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 170 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO126
BTD1805BT3 Transistor Equivalent Substitute - Cross-Reference Search
BTD1805BT3 Datasheet (PDF)
btd1805bt3.pdf
Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features
btd1805i3.pdf
Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
btd1805j3.pdf
Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VIC 5ABTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve
btd1805ad3.pdf
Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp.Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
btd1805f3.pdf
Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp.Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
btd1805fp.pdf
Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
btd1805d3.pdf
Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2S166
